Power MEMS 2017

The 17th International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications.

Meet us at Power MEMS 2017 Kanazawa, Japan.

The objective of the conference is to catalyze innovation related to miniaturization for power generation and energy conversion. Its topics of interest range from basic principles, to materials and fabrication, to devices and systems, to applications. All energy domains are of interest, including, but not limited to: electrical, fluidic, gravitational, hydraulic, magnetic, mechanical, nuclear, optical, piezoelectric, photovoltaic, pneumatic, thermal energy domains and x-ray.

Our abstract “Zinc oxide nanowire-parylene nanocomposite based stretchable piezoelectric nanogenerators for self-powered wearable electronics” was accepted for oral presentation.

Event date : Nov. 14-17, 2017

SENSO 2017

5th edition of the “Sensors, Energy harvesting, wireless Network and Smart Objects” International Conference.

Meet us at SENSO 2017 Gardanne / Aix en Provence, France.

This year, the SENSO conference will be dedicated to «Sensors, Energy harvesting, wireless Network and Smart Objects». The aim of this event is to provide a more integrated vision of the way IoT smart sensor nodes work and communicate, from the way they are wirelessly powered to their final deployment into a network for an actual working environment. That will make an unmissable event for all the different actors to meet each other and foster new exciting opportunities.

Our abstract “Self-powered pressure sensor array based on piezoelectric ZnO nanowires” was accepted for oral presentation.

Event date : Nov. 15-17, 2017

JNTE 2017

French Symposium on Emerging Technologies for micro-nanofabrication / Journées Nationales sur les Technologies Emergentes en micronanofabrication.

Meet us at JNTE 2017 Orléans, France.

This workshop aims to bring together on an interdisciplinary basis all the major actors of the scientific community involved in the development of emerging technologies for micro-nanofabrication, with applications in the domains of optics and photonics, physics of nanostructures, electronics, chemistry, biology.

Our abstract “ZnO nanostructures for electronics : from transistors to nanogenerators” was accepted for oral presentation.

Event date : Nov. 20-22, 2017

New publication

C. Opoku, A. S. Dahiya, G. Poulin-Vittrant, N. Camara, D. Alquier, “Source-Gating Effect in Hydrothermally Grown ZnO Nanowire Transistors”, Physica Status Solidi A 213, No. 9 (2016) 2438–2445. Click here to read.

(a) Scanning electron microscope image of a representative single ZnO NW device. (b) Schematic showing device cross-section. (c) Schematic showing the cross-sectional view of the depletion profile at source pinch-off.


Nanowire source-gated field-effect transistors (NW SGT) are demonstrated using hydrothermally grown ZnO NWs. Device quality ZnO NWs with moderate n-type doping are achieved by thermal annealing in ambient air at ∼550 °C. A single ZnO NW device with Au source-drain contacts (s/d) is found to operate under source-gating mode, with characteristics markedly different from a reference device with ohmic contacts. The NW SGT shows exceptionally early drain current–voltage saturation (IDSAT–VDSAT) below 1 V. The change in saturation with the gate voltage (VG) is over 80 times lower than a reference device with ohmic contacts. This device behavior is attributed to the source-gate overlap, enabling gate field penetration inside the depleted source. Current modulation is obtained by a combination of gate-induced image force barrier lowering and the high internal electric fields at source pinch-off. Effective Schottky barrier heights are extracted from activation energy measurements, revealing systematic barrier lowering with increasing VG. These features of the device lead us to conclude that the single NW field-effect transistor (FET) with Schottky contacts operated under SGT mode.